metal impurities中文是什么意思

• 金属杂质

• "metal"中文翻译    n. 1.金属；金属制品；金属合金。 2.【化学】金属元 ...
• "impurity"中文翻译    n. 〔常用 pl.〕 1.不纯，不洁。 2.下流，不道 ...
• "impurities" 中文翻译 :    悬浮固体物; 一级叶轮; 杂质
• "abrasive impurities" 中文翻译 :    有磨蚀作用的杂质
• "absorption by impurities" 中文翻译 :    杂质吸收
• "accumulation of impurities" 中文翻译 :    杂质积聚
• "atmosphere impurities" 中文翻译 :    大气杂质
• "atmospheric impurities" 中文翻译 :    大气杂质
• "colored impurities" 中文翻译 :    有色杂质
• "compensated impurities" 中文翻译 :    补偿杂质
• "deleterious impurities" 中文翻译 :    有害杂质
• "dissolved impurities" 中文翻译 :    溶解杂质
• "dissovlved impurities" 中文翻译 :    溶解本质素
• "distribution of impurities" 中文翻译 :    杂质分布
• "electropositive impurities" 中文翻译 :    正电性杂质
• "extraneous impurities" 中文翻译 :    外观杂质
• "foreign impurities" 中文翻译 :    外来杂质
• "gas impurities" 中文翻译 :    气体杂质
• "gaseous impurities" 中文翻译 :    气态杂质; 气体杂质
• "impurities diffusion" 中文翻译 :    杂质扩散
• "impurities in a herb" 中文翻译 :    草药的杂质
• "impurities in coal" 中文翻译 :    煤中杂质
• "impurities of seam" 中文翻译 :    煤层中杂质
• "impurities of wool" 中文翻译 :    羊毛中的杂质
• "impurities picking" 中文翻译 :    拣矸

• Advanced manufacturing processes are applied and the content of metal impurity is rigorously controlled . the oxidant is reduced to the minimum extent in each manufacturing process
  采用先进制程并严格控制金属杂质的含量，并在每一制程中将氧化物降至最低程度。
• Recently , a new gettering technique , which cavities formed by high - dose helium - implantation and subsequent annealing at lower temperature is efficiently at gettering metal impurities , has been concentrated
  近年来一种新的吸杂技术?氦微孔吸杂技术因其对金属杂质显著的吸除效果而备受关注。
• By analyzing the difference on ( loo ) and ( 110 ) face in the structure of dkdp crystal , the different of uv - vis transmission spectra and the different of concentrations of metal impurities in different part of dkdp crystal was explained
  通过分析dkdp晶体的原子结构以及柱面和锥面的原子结构差别，解释了晶体柱面和锥面杂质金属离子含量差别的原因以及其与紫外可见透过光谱的关系。
• Many gettering techniques have been widely studied to overcome this problem by removing metal impurities from active regions of device . one new gettering method that has recently received growing interest is the use of nanocavities resulting from helium or hydrogen implantation
  所以需要减小有源区中金属杂质的浓度，通常采用吸除的方法把金属杂质从器件有源区吸收到有源区之外预先形成的sink (陷阱)中。
• Poly - crystallization silicon thin film transistor ( p - si tft ) addressing liquid crystal display has been currently the research and development focus in the field of flat panel displays , as it is most feasible approach to high resolution , high integration and low power consumption as a result of its high aperture ration . there are less number interface of the crystal grain , lower metal impurity and higher mobility in the electric current director , the milc p - si tft has been the research focus in the fields of amlcd , projection display , oled etc . there are vast dangling bonds and bug
  多晶硅薄膜晶体管( p - sitft )液晶显示器可以实现高分辨率、高集成度、同时有效降低显示器的功耗,因而成为目前平板显示领域主要研究方向;而以横向晶化多晶硅为有源层的tft由于在导电方向有更少的晶界、更低的金属杂质污染、更高的载流子迁移率而成为目前有源矩阵液晶显示领域、投影显示、 oled显示等领域研究的热点。
• Metal impurities unintentionally introduced into si wafers during various device process steps are very harmful to device performances . many gettering techniques have been widely studied to overcome these problems by removing metal impurities from the active region of a device . reduction in device size and introduction of new moralization processes require more efficient gettering techniques working at lower temperatures
  半导体工艺中无意引入的金属杂质的污染会极大损害器件性能，为了将金属杂质从器件的有源区吸除，吸杂技术被广泛的研究，器件尺寸的不断缩小和新的金属化工艺的不断出现更需要能在低温有效吸除的技术。
• Some previous experiments have showed that cavities had more efficient gettering than p - diffusion , mechanical damage and ion implantation . most of studies about cavities gettering are concentrated on the peculiarity of cavities gettering metal impurities intentionally into silicon wafer from the viewpoint of basic study . this technique especially applied to low - contamination process , how ever , has not been carefully studied , which should be important to the semiconductor manufacturing
  而过去的工作多集中在从基础研究的角度研究氦微孔对有意掺入金属杂质的硅片的吸除特性，对无意引入的低浓度金属杂质的器件吸杂效果的研究却非常少，这方面的研究是氦微孔技术走向实际应用的必经之路。